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2N3906BU - onsemi-2N6520RLRAG GP BJT Trans GP BJT PNP 350V 0.5A 625mW 3-Pin TO-92 T/R

2N3906BU

Active
ON Semiconductor

200 MA, 40 V PNP SMALL SIGNAL BIPOLAR JUNCTION TRANSISTOR

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2N3906BU - onsemi-2N6520RLRAG GP BJT Trans GP BJT PNP 350V 0.5A 625mW 3-Pin TO-92 T/R

2N3906BU

Active
ON Semiconductor

200 MA, 40 V PNP SMALL SIGNAL BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3906BU
Current - Collector (Ic) (Max) [Max]200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition250 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3
Power - Max [Max]625 mW
Supplier Device PackageTO-92-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 0.24
10$ 0.14
100$ 0.09
500$ 0.06
1000$ 0.05
2000$ 0.05
5000$ 0.04
6725$ 0.04
10000$ 0.04
DigikeyBulk 6804$ 0.04
NewarkEach 1$ 0.25
10$ 0.18
100$ 0.10
500$ 0.08
1000$ 0.06
2500$ 0.06
10000$ 0.05
ON SemiconductorN/A 1$ 0.03

Description

General part information

2N3906T Series

The 200 mA, 40 V PNP Small Signal Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.