IXTP76N075T

Obsolete

IXYS

MOSFET N-CH 75V 76A TO220AB

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Obsolete

IXYS

MOSFET N-CH 75V 76A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP76N075T

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	176 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Mounting Type
IXYS IXTP76N075T	75 V	176 W	4 V	-55 °C	175 ░C	57 nC	MOSFET (Metal Oxide)	12 mOhm	76 A	20 V	TO-220-3	10 V	TO-220-3	N-Channel	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 75 V 76A (Tc) 176W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available