PJQ5866A-AU_R2_000A1

Active

Panjit International Inc.

60V DUAL N-CHANNEL ENHANCEMENT M

Search across all available documentation for this part.

Active

Panjit International Inc.

60V DUAL N-CHANNEL ENHANCEMENT M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5866A-AU_R2_000A1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7 A, 40 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	13.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1574 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	2 W, 68.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	DFN5060B-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Grade	Package / Case	Configuration	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Qualification	Vgs(th) (Max) @ Id
Panjit International Inc. PJQ5866A-AU_R2_000A1	Automotive	8-PowerTDFN	2 N-Channel (Dual)	DFN5060B-8	60 V	7 A 40 A	1574 pF	-55 °C	175 ░C	13.5 nC	2 W 68.2 W	Surface Mount	17 mOhm	MOSFET (Metal Oxide)	AEC-Q101	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 7A (Ta), 40A (Tc) 2W (Ta), 68.2W (Tc) Surface Mount DFN5060B-8

Technical documentation and resources