GP3D006A065A
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DIODE SIL CARB 650V 20A TO220-2L
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GP3D006A065A
ActiveSemiQ
DIODE SIL CARB 650V 20A TO220-2L
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GP3D006A065A |
|---|---|
| Capacitance @ Vr, F | 229 pF |
| Current - Reverse Leakage @ Vr | 15 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-220-2 |
| Speed | No Recovery Time |
| Supplier Device Package | TO-220-2L |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.64 | |
| 10 | $ 1.70 | |||
| 100 | $ 1.17 | |||
| 500 | $ 0.94 | |||
| 1000 | $ 0.86 | |||
| 2000 | $ 0.80 | |||
| 5000 | $ 0.76 | |||
Description
General part information
GP3D006 Series
Diode 650 V 20A Through Hole TO-220-2L
Documents
Technical documentation and resources