UGE1112AY4

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IXYS

DIODE GEN PURP 8KV 4.2A UGE

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IXYS

DIODE GEN PURP 8KV 4.2A UGE

Technical Specifications

Parameters and characteristics for this part

Specification	UGE1112AY4

Current - Average Rectified (Io)	4.2 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Chassis Mount
Package / Case	UGE
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	UGE
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	8000 V
Voltage - Forward (Vf) (Max) @ If	6.25 V

Part	Current - Average Rectified (Io)	Mounting Type	Speed	Speed	Current - Reverse Leakage @ Vr	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
IXYS UGE1112AY4	4.2 A	Chassis Mount	Standard Recovery >500ns	200 mA	1 mA	Standard	UGE	8000 V	6.25 V	UGE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 8000 V 4.2A Chassis Mount UGE

Technical documentation and resources