PJP60R390E_T0_00001

NRND

Panjit International Inc.

600V N-CHANNEL SUPER JUNCTION MO

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NRND

Panjit International Inc.

600V N-CHANNEL SUPER JUNCTION MO

Technical Specifications

Parameters and characteristics for this part

Specification	PJP60R390E_T0_00001

Current - Continuous Drain (Id) @ 25°C	1.5 A, 11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	531 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	124 W, 2 W
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Panjit International Inc. PJP60R290E_T0_00001	-55 °C	150 °C	TO-220AB	600 V	20 V	10 V	TO-220-3	1.7 A 15 A	40 nC	MOSFET (Metal Oxide)	N-Channel	1013 pF	Through Hole	4 V
Panjit International Inc. PJP60R390E_T0_00001	-55 °C	150 °C	TO-220AB	600 V	20 V	10 V	TO-220-3	1.5 A 11 A		MOSFET (Metal Oxide)	N-Channel	531 pF	Through Hole	4 V	2 W 124 W	32 nC
Panjit International Inc. PJP60R190E_T0_00001	-55 °C	150 °C	TO-220AB	600 V	20 V	10 V	TO-220-3	2.1 A 20 A		MOSFET (Metal Oxide)	N-Channel	1421 pF	Through Hole	4 V	2 W 231 W	62 nC	196 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 1.5A (Ta), 11A (Tc) 2W (Ta), 124W (Tc) Through Hole TO-220AB

Technical documentation and resources