2N3417_D26Z

Obsolete

ON Semiconductor

TRANS NPN 50V 0.5A TO92-3

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS NPN 50V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N3417_D26Z

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor 2N3416_D29Z	TO-226-3 TO-92-3	NPN	300 mV	625 mW	500 mA	-55 °C	150 °C	50 V	100 nA	Through Hole	TO-92-3
ON Semiconductor 2N3417_D89Z	TO-226-3 TO-92-3	NPN	300 mV	625 mW	500 mA	-55 °C	150 °C	50 V	100 nA	Through Hole	TO-92-3	180 hFE
ON Semiconductor 2N3416	TO-226-3 TO-92-3	NPN	300 mV	625 mW	500 mA	-55 °C	150 °C	50 V	100 nA	Through Hole	TO-92-3
ON Semiconductor 2N3417_D75Z	TO-226-3 TO-92-3	NPN	300 mV	625 mW	500 mA	-55 °C	150 °C	50 V	100 nA	Through Hole	TO-92-3	180 hFE
ON Semiconductor 2N3416_D74Z	TO-226-3 TO-92-3	NPN	300 mV	625 mW	500 mA	-55 °C	150 °C	50 V	100 nA	Through Hole	TO-92-3
ON Semiconductor 2N3415_D75Z	TO-226-3 TO-92-3	NPN	300 mV	625 mW	500 mA	-55 °C	150 °C		100 nA	Through Hole	TO-92-3	180 hFE	25 V
ON Semiconductor 2N3417	TO-226-3 TO-92-3	NPN	300 mV	625 mW	500 mA	-55 °C	150 °C	50 V	100 nA	Through Hole	TO-92-3	180 hFE
ON Semiconductor 2N3417_D26Z	TO-226-3 TO-92-3	NPN	300 mV	625 mW	500 mA	-55 °C	150 °C	50 V	100 nA	Through Hole	TO-92-3	180 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 50 V 500 mA 625 mW Through Hole TO-92-3

Technical documentation and resources