GBJ30K

Active

GeneSiC Semiconductor

1.05V@15A 30A 800V GBJ BRIDGE RECTIFIERS ROHS

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

1.05V@15A 30A 800V GBJ BRIDGE RECTIFIERS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	GBJ30K

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBJ
Supplier Device Package	GBJ
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.05 V
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Package / Case	Voltage - Peak Reverse (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Supplier Device Package	Diode Type
GeneSiC Semiconductor GBJ30K	4-SIP GBJ	800 V	5 µA	30 A	Standard	-55 °C	150 °C	1.05 V	Through Hole	GBJ	Single Phase
GeneSiC Semiconductor GBJ30G	4-SIP GBJ	400 V	5 µA	30 A	Standard	-55 °C	150 °C	1.05 V	Through Hole	GBJ	Single Phase

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBJ

Technical documentation and resources