Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5639 |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 V, 25 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-92-3 Long Body, TO-226-3 |
| Power - Max [Max] | 310 mW |
| Resistance - RDS(On) | 60 Ohms |
| Supplier Device Package | TO-92 |
| Supplier Device Package | TO-226 |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
2N5639 Series
N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high-speed switching applications.
Documents
Technical documentation and resources
