PJMH190N60E1_T0_00601

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Panjit International Inc.

600V/ 190MOHM / 20.6A/ EASY TO D

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Active

Panjit International Inc.

600V/ 190MOHM / 20.6A/ EASY TO D

Technical Specifications

Parameters and characteristics for this part

Specification	PJMH190N60E1_T0_00601

Current - Continuous Drain (Id) @ 25°C	20.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-247AD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package
Panjit International Inc. PJMH190N60E1_T0_00601	20.6 A	30 V	10 V	180 mOhm	3.8 V	Through Hole	N-Channel	40 nC	TO-247-3	MOSFET (Metal Oxide)	-55 °C	150 °C	600 V	TO-247AD

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 20.6A (Tc) 160W (Tc) Through Hole TO-247AD

Technical documentation and resources