1N5819BULK

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EIC Semiconductor

DIODE SCHOTTKY 40V 1A DO41

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Active

EIC Semiconductor

DIODE SCHOTTKY 40V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N5819BULK

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	600 mV

Part	Package / Case	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Reverse Leakage @ Vr
EIC Semiconductor 1N5819BULK	Axial DO-204AL DO-41	1 A	600 mV	DO-41	40 V	110 pF	Schottky	Through Hole	125 °C	-65 C	200 mA 500 ns	1 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bag	500	$ 0.21

General part information

Diode 40 V 1A Through Hole DO-41

Technical documentation and resources