BAV101 L1G

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Taiwan Semiconductor Corporation

DIODE GP 250V 200MA MINI MELF

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Taiwan Semiconductor Corporation

DIODE GP 250V 200MA MINI MELF

Technical Specifications

Parameters and characteristics for this part

Specification	BAV101 L1G

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	MINI-MELF, DO-213AC, SOD-80
Speed	Any Speed
Speed	200 mA
Supplier Device Package	Mini MELF
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	250 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Supplier Device Package	Capacitance @ Vr, F	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type
Taiwan Semiconductor Corporation BAV101 L1G	Mini MELF	4 pF	DO-213AC MINI-MELF SOD-80	200 C	-65 C	100 nA	1 V	Any Speed	200 mA	Standard	250 V	200 mA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 250 V 200mA Surface Mount Mini MELF

Technical documentation and resources

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