Technical Specifications
Parameters and characteristics for this part
| Specification | 2SD882 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 12.5 W |
| Supplier Device Package | SOT-32 (TO-126) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2SD882 Series
The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772.
Documents
Technical documentation and resources
