2SA1163-BL,LF

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Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

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Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1163-BL,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	350 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Supplier Device Package	S-Mini
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Transistor Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Mounting Type	Frequency - Transition	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage 2SA1163-BL,LF	300 mV	125 ¯C	PNP	100 mA	150 mW	120 V	S-Mini	Surface Mount	100 MHz	SC-59 SOT-23-3 TO-236-3	100 nA	350 hFE

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General part information

Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini

Technical documentation and resources