
IS66WVC2M16EALL-7010BLI
ActiveISSI, Integrated Silicon Solution Inc
32MB,PSEUDO SRAM,ASYNCH/PAGE/BURST CRAM 1.5,2M X 16,70NS,1.7V-1.95V,54 BALL BGA (6X8 MM), ROHS
Deep-Dive with AI
Search across all available documentation for this part.

IS66WVC2M16EALL-7010BLI
ActiveISSI, Integrated Silicon Solution Inc
32MB,PSEUDO SRAM,ASYNCH/PAGE/BURST CRAM 1.5,2M X 16,70NS,1.7V-1.95V,54 BALL BGA (6X8 MM), ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS66WVC2M16EALL-7010BLI |
|---|---|
| Access Time | 70 ns |
| Memory Format | PSRAM |
| Memory Interface | Parallel |
| Memory Organization | 2 M |
| Memory Size | 32 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 54-VFBGA |
| Supplier Device Package | 54-VFBGA (6x8) |
| Technology | PSRAM (Pseudo SRAM) |
| Voltage - Supply [Max] | 1.95 V |
| Voltage - Supply [Min] | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS66WVC2M16 Series
PSRAM (Pseudo SRAM) Memory IC 32Mbit Parallel 70 ns 54-VFBGA (6x8)
Documents
Technical documentation and resources
No documents available