FMM50-025TF

Obsolete

IXYS

MOSFET 2N-CH 250V 30A I4-PAC

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Obsolete

IXYS

MOSFET 2N-CH 250V 30A I4-PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FMM50-025TF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	250 V
Gate Charge (Qg) (Max) @ Vgs	78 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Power - Max [Max]	125 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
IXYS FMM50-025TF	4.5 V	30 A	78 nC	Through Hole	125 W	50 mOhm	2 N-Channel (Dual)	250 V	-55 °C	150 °C	i4-Pac™-5	MOSFET (Metal Oxide)	4000 pF	ISOPLUS i4-PAC™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 250V 30A 125W Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available