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IPS1025HFQ - 48 QFN

IPS1025HFQ

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STMicroelectronics

HIGH EFFICIENCY, HIGH-SIDE SWITCH WITH EXTENDED DIAGNOSTICS, SMART DRIVING FOR CAPACITIVE LOADS AND SHORT PROPAGATION DELAY AT POWER-ON

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DocumentsDatasheet+3
IPS1025HFQ - 48 QFN

IPS1025HFQ

Active
STMicroelectronics

HIGH EFFICIENCY, HIGH-SIDE SWITCH WITH EXTENDED DIAGNOSTICS, SMART DRIVING FOR CAPACITIVE LOADS AND SHORT PROPAGATION DELAY AT POWER-ON

Deep-Dive with AI

DocumentsDatasheet+3

Technical Specifications

Parameters and characteristics for this part

SpecificationIPS1025HFQ
Current - Output (Max) [Max]2.4 A
Fault ProtectionCurrent Limiting (Fixed), UVLO, Over Temperature, Over Load
Input TypeNon-Inverting
InterfaceLogic
Mounting TypeSurface Mount
Number of Outputs1
Output ConfigurationHigh Side
Output TypeN-Channel
Package / Case48-VFQFN Exposed Pad
Ratio - Input:Output [custom]1:1
Rds On (Typ)12 mOhm
Supplier Device Package48-QFN (8x6)
Switch TypeGeneral Purpose
Voltage - Load [Max]60 V
Voltage - Load [Min]8.65 V
Voltage - Supply (Vcc/Vdd)False

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.60
10$ 5.92
25$ 5.60
100$ 4.85
250$ 4.60
500$ 4.13
1000$ 3.48
Digi-Reel® 1$ 6.60
10$ 5.92
25$ 5.60
100$ 4.85
250$ 4.60
500$ 4.13
1000$ 3.48
Tape & Reel (TR) 2500$ 3.31
NewarkEach (Supplied on Cut Tape) 1$ 5.91
10$ 4.53
25$ 4.18
50$ 3.99
100$ 3.80
250$ 3.62
500$ 3.51
1000$ 3.42

Description

General part information

X-NUCLEO-OUT15A1 Series

The IPS1025HF and IPS1025HFQ are single high-side switch ICs able to drive capacitive, resistive or inductive loads with one side connected to ground.

The 60 V operating range and RDS-ON = 12 mΩ (typ.), combined with the extended diagnostic (Over Load, Over-temperature) and the < 60 us propagation delay time at startup (enabling Class 3 for interface types C and D), make the IC suitable for applications implementing the proper architectures to address higher SIL levels.

The very low RDS-ON (≤ 25 mΩ up to TJ = 125 °C) makes the IC suitable for the applications with up to 2.4 A steady state operating current.