1N6095R

Active

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V 25A DO4

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V 25A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N6095R

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	2 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Stud, DO-203AA, DO-4
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	580 mV

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology	Current - Average Rectified (Io)	Speed
GeneSiC Semiconductor 1N6095R	2 mA	30 V	580 mV	Chassis Stud Mount	DO-4	150 °C	-55 °C	DO-203AA DO-4 Stud	Reverse Polarity Schottky	25 A	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 25A Chassis, Stud Mount DO-4

Technical documentation and resources