BZX55B6V8

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Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

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Active

Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

Technical Specifications

Parameters and characteristics for this part

Part	Current - Reverse Leakage @ Vr	Impedance (Max) (Zzt) [Max]	Mounting Type	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Zener (Nom) (Vz)	Voltage - Forward (Vf) (Max) @ If	Power - Max [Max]	Tolerance
Taiwan Semiconductor Corporation BZX55B3V0	10 µA	85 Ohms	Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	3 V	1 V	500 mW	2 %
Taiwan Semiconductor Corporation BZX55B8V2 A0G	100 nA	7 Ohms	Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	8.2 V	1 V	500 mW	2 %
Taiwan Semiconductor Corporation BZX55B24 A0G	100 nA		Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	24 V	1 V	500 mW	2 %
Taiwan Semiconductor Corporation BZX55B6V8	100 nA		Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	6.8 V	1 V	500 mW	2 %
Taiwan Semiconductor Corporation BZX55B51	100 nA	125 Ohms	Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	51 V	1 V	500 mW	2 %
Taiwan Semiconductor Corporation BZX55B39	100 nA	90 Ohms	Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	39 V	1 V	500 mW	2 %
Taiwan Semiconductor Corporation BZX55B47 A0G	100 nA	110 Ohms	Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	47 V	1 V	500 mW	2 %
Taiwan Semiconductor Corporation BZX55B7V5	100 nA	7 Ohms	Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	7.5 V	1 V	500 mW	2 %
Taiwan Semiconductor Corporation BZX55C2V2	100 µA		Through Hole	DO-35	Axial DO-204AH DO-35	-55 °C	175 ░C	2.2 V	1 V	500 mW	5 %

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Zener Diode 6.8 V 500 mW ±2% Through Hole DO-35

Technical documentation and resources