SSN1N45BBU

Obsolete

ON Semiconductor

MOSFET N-CH 450V 500MA TO92-3

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Obsolete

ON Semiconductor

MOSFET N-CH 450V 500MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	SSN1N45BBU

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max) [Max]	900 mW
Rds On (Max) @ Id, Vgs	4.25 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	50 V
Vgs(th) (Max) @ Id	3.7 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor SSN1N45BBU	-55 °C	150 °C	240 pF	8.5 nC	50 V	Through Hole	3.7 V	MOSFET (Metal Oxide)	450 V	N-Channel	4.25 Ohm	900 mW	TO-226-3 TO-92-3	10 V	TO-92-3	500 mA
ON Semiconductor SSN1N45BBU	-55 °C	150 °C	240 pF	8.5 nC	50 V	Through Hole	3.7 V	MOSFET (Metal Oxide)	450 V	N-Channel	4.25 Ohm	900 mW	TO-226-3 TO-92-3	10 V	TO-92-3	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 450 V 500mA (Tc) 900mW (Ta) Through Hole TO-92-3

Technical documentation and resources