GD25LQ16ENAGR

Active

GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

Deep-Dive with AI

Search across all available documentation for this part.

GD25LQ16ENAGR

Active

GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GD25LQ16ENAGR

Access Time	6 ns
Clock Frequency	133 MHz
Memory Format	FLASH
Memory Interface	Quad I/O, QPI, SPI
Memory Organization	2 M
Memory Size	16 Mb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-UDFN Exposed Pad
Supplier Device Package	8-USON (3x4)
Technology	FLASH - NOR (SLC)
Voltage - Supply [Max]	2.1 V
Voltage - Supply [Min]	1.65 V
Write Cycle Time - Word, Page [custom]	100 µs
Write Cycle Time - Word, Page [custom]	4 ms

GD25LQ16 Series

Part	Clock Frequency	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Organization	Mounting Type	Memory Size	Package / Case	Memory Type	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Format	Technology	Access Time	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25LQ16C8IGR	104 MHz	85 °C	-40 °C	SPI - Quad I/O	50 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-XFLGA Exposed Pad	Non-Volatile	8-LGA	2.1 V	1.65 V	FLASH	FLASH - NOR
GigaDevice Semiconductor (HK) Limited GD25LQ16ESIGR	133 MHz	85 °C	-40 °C	QPI Quad I/O SPI	60 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-SOIC	Non-Volatile	8-SOP	2.1 V	1.65 V	FLASH	FLASH - NOR (SLC)	6 ns	5.3 mm	0.209 "
GigaDevice Semiconductor (HK) Limited GD25LQ16CNIGR	104 MHz	85 °C	-40 °C	SPI - Quad I/O	50 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-UDFN Exposed Pad	Non-Volatile	8-USON (4x3)	2.1 V	1.65 V	FLASH	FLASH - NOR
GigaDevice Semiconductor (HK) Limited GD25LQ16ETIGR	133 MHz	85 °C	-40 °C	QPI Quad I/O SPI	60 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-SOIC	Non-Volatile	8-SOP	2.1 V	1.65 V	FLASH	FLASH - NOR (SLC)	6 ns	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LQ16ETJGR	133 MHz	105 °C	-40 °C	QPI Quad I/O SPI	60 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-SOIC	Non-Volatile	8-SOP	2.1 V	1.65 V	FLASH	FLASH - NOR (SLC)	6 ns	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LQ16ET2GR	133 MHz	105 °C	-40 °C	QPI Quad I/O SPI	60 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-SOIC	Non-Volatile	8-SOP	2.1 V	1.65 V	FLASH	FLASH - NOR (SLC)	6 ns	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LQ16ENAGR	133 MHz	125 °C	-40 °C	QPI Quad I/O SPI	100 µs	4 ms	2 M	Surface Mount	16 Mb	8-UDFN Exposed Pad	Non-Volatile	8-USON (3x4)	2.1 V	1.65 V	FLASH	FLASH - NOR (SLC)	6 ns
GigaDevice Semiconductor (HK) Limited GD25LQ16EWIGY	133 MHz	85 °C	-40 °C	QPI Quad I/O SPI	60 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-WDFN Exposed Pad	Non-Volatile	8-WSON (5x6)	2.1 V	1.65 V	FLASH	FLASH - NOR (SLC)	6 ns
GigaDevice Semiconductor (HK) Limited GD25LQ16EWIGR	133 MHz	85 °C	-40 °C	QPI Quad I/O SPI	60 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-WDFN Exposed Pad	Non-Volatile	8-WSON (5x6)	2.1 V	1.65 V	FLASH	FLASH - NOR (SLC)	6 ns
GigaDevice Semiconductor (HK) Limited GD25LQ16ENIGR	133 MHz	85 °C	-40 °C	QPI Quad I/O SPI	60 µs	2.4 ms	2 M	Surface Mount	16 Mb	8-UDFN Exposed Pad	Non-Volatile	8-USON (3x4)	2.1 V	1.65 V	FLASH	FLASH - NOR (SLC)	6 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.91
		6000	$ 0.88

Description

General part information

GD25LQ16 Series

FLASH - NOR (SLC) Memory IC 16Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 8-USON (3x4)

Documents

Technical documentation and resources

No documents available