TN5415A

Obsolete

ON Semiconductor

TRANS PNP 200V 0.1A TO226-3

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS PNP 200V 0.1A TO226-3

Technical Specifications

Parameters and characteristics for this part

Specification	TN5415A

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-226-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Package / Case	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type
ON Semiconductor TN5415A	100 mA	PNP	TO-226-3 TO-92-3	TO-226-3	1 W	30	-55 °C	150 °C	200 V	50 µA	2.5 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 200 V 100 mA 1 W Through Hole TO-226-3

Technical documentation and resources