HS1MFS

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Taiwan Semiconductor Corporation

75NS, 1A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

75NS, 1A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HS1MFS

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-128
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-128
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology
Taiwan Semiconductor Corporation HS1ML RFG	150 °C	-55 °C	75 ns	Surface Mount	15 pF	DO-219AB	1 A	1000 V	1.7 V	200 mA 500 ns	Sub SMA	5 µA	Standard
Taiwan Semiconductor Corporation HS1MFL	150 °C	-55 °C	75 ns	Surface Mount	6 pF	SOD-123F	1 A	1000 V	1.7 V	200 mA 500 ns	SOD-123F	5 µA	Standard
Taiwan Semiconductor Corporation HS1MFS	150 °C	-55 °C	75 ns	Surface Mount	8 pF	SOD-128	1 A	1000 V	1.7 V	200 mA 500 ns	SOD-128	1 µA	Standard
Taiwan Semiconductor Corporation HS1M	150 °C	-55 °C	75 ns	Surface Mount	15 pF	DO-214AC SMA	1 A	1000 V	1.7 V	200 mA 500 ns	DO-214AC (SMA)	5 µA	Standard

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General part information

Diode 1000 V 1A Surface Mount SOD-128

Technical documentation and resources