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2EDS8265HXUMA2 - 16-SOIC 7,5

2EDS8265HXUMA2

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Infineon Technologies

EICEDRIVER™ 650 V HALF BRIDGE, HIGH-SIDE, LOW-SIDE DRIVER IC WITH TYPICAL 4 A SOURCE AND 8 A SINK OUTPUT CURRENTS. IT COMES WITH A REINFOCED GALVANICALLY ISOLATED PG-DSO-16 PACKAGE AND WORKS WITH GAN HEMTS AND MOSFETS. FEATURES: DUAL INPUT, CMTI GREATER THAN 150V/NS, PROP DELAY MATCHING<3NS, DRIVER RON (0.35MΩ/0.85MΩ)

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2EDS8265HXUMA2 - 16-SOIC 7,5

2EDS8265HXUMA2

Active
Infineon Technologies

EICEDRIVER™ 650 V HALF BRIDGE, HIGH-SIDE, LOW-SIDE DRIVER IC WITH TYPICAL 4 A SOURCE AND 8 A SINK OUTPUT CURRENTS. IT COMES WITH A REINFOCED GALVANICALLY ISOLATED PG-DSO-16 PACKAGE AND WORKS WITH GAN HEMTS AND MOSFETS. FEATURES: DUAL INPUT, CMTI GREATER THAN 150V/NS, PROP DELAY MATCHING<3NS, DRIVER RON (0.35MΩ/0.85MΩ)

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Technical Specifications

Parameters and characteristics for this part

Specification2EDS8265HXUMA2
Channel TypeIndependent
Current - Peak Output (Source, Sink)8 A, 4 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel, P-Channel MOSFET
Input TypeNon-Inverting
Logic Voltage - VIL, VIH1.65 V
Logic Voltage - VIL, VIH-
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case16-SOIC
Package / Case [x]0.295 in
Package / Case [y]7.5 mm
Rise / Fall Time (Typ) [custom]4.5 ns
Rise / Fall Time (Typ) [custom]6.5 ns
Voltage - Supply20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.85
10$ 3.46
25$ 3.27
100$ 2.83
250$ 2.69
500$ 2.41
Digi-Reel® 1$ 3.85
10$ 3.46
25$ 3.27
100$ 2.83
250$ 2.69
500$ 2.41
Tape & Reel (TR) 1000$ 2.03
2000$ 1.93
5000$ 1.86
NewarkEach (Supplied on Cut Tape) 1$ 3.79
10$ 2.63
25$ 2.55
50$ 2.45
100$ 2.37
250$ 2.25
500$ 2.17
1000$ 2.15

Description

General part information

2EDS8265 Series

The EiceDRIVER™ 2EDS8265H is a reinforced isolated gate driverfor secondary-side control over the mandatory safe isolation barrier in SMPS. The strong 4A/8A source/sink dual-channel gate driver comes with a very high 150V/ns CMTI (Common Mode Transient Immunity) for robust operation with fast CoolMOS™ and high power switching noise environment. The very short propagation delay of 37ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. The 2EDS8265H with 1A/2A is available for smaller MOSFETs or PWM signal/data decoupling for very high power designs working with local boost drivers. Safety certificates in accordance with UL1577, VDE0884-10, and IEC62368 are available. The 2EDS8265H comes in a wide-body 300mil DSO-16 package.

Documents

Technical documentation and resources