VS-100BGQ030

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 100A POWIRTAB

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 100A POWIRTAB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-100BGQ030

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	2.4 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	PowIRtab™, PowerTab™
Speed	200 mA, 500 ns
Supplier Device Package	PowIRtab™
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	580 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Mounting Type	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-100BGQ030	30 V	150 °C	-55 °C	100 A	Chassis Mount	200 mA 500 ns	Schottky	580 mV	PowerTab™ PowIRtab™	PowIRtab™	2.4 mA

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General part information

Diode 30 V 100A Chassis Mount PowIRtab™

Technical documentation and resources