GB2X50MPS17-227

Obsolete

GeneSiC Semiconductor

DIODE MOD SIC 1700V 136A SOT227

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Obsolete

GeneSiC Semiconductor

DIODE MOD SIC 1700V 136A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	GB2X50MPS17-227

Current - Average Rectified (Io) (per Diode)	136 A
Current - Reverse Leakage @ Vr	50 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Current - Reverse Leakage @ Vr	Diode Configuration	Current - Average Rectified (Io) (per Diode)
GeneSiC Semiconductor GB2X50MPS17-227	1.8 V	Chassis Mount	1700 V	SOT-227-4 miniBLOC	0 ns	SiC (Silicon Carbide) Schottky	175 ░C	-55 C	SOT-227	No Recovery Time	50 µA	2 Independent	136 A
GeneSiC Semiconductor GB2X50MPS12-227	1.8 V	Chassis Mount	1.2 kV	SOT-227-4 miniBLOC	0 ns	SiC (Silicon Carbide) Schottky	175 ░C	-55 C	SOT-227	No Recovery Time	40 µA	2 Independent	93 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 96.71

General part information

Diode Array 2 Independent 1700 V 136A (DC) Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources