DSEP29-12A

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IXYS

DIODE GEN PURP 1.2KV 30A TO220AC

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IXYS

DIODE GEN PURP 1.2KV 30A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	DSEP29-12A

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.75 V

Part	Reverse Recovery Time (trr)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
IXYS DSEP29-06A	35 ns	Through Hole	600 V	TO-220-2	Standard	200 mA 500 ns	250 µA	30 A	175 ░C	-55 C	TO-220AC	1.61 V
IXYS DSEP29-06B	30 ns	Through Hole	600 V	TO-220-2	Standard	200 mA 500 ns	250 µA	30 A	175 ░C	-55 C	TO-220AC	2.52 V
IXYS DSEP29-12A	40 ns	Through Hole	1.2 kV	TO-220-2	Standard	200 mA 500 ns	250 µA	30 A	175 ░C	-55 C	TO-220AC	2.75 V
IXYS DSEP29-06AS-TRL	35 ns	Surface Mount	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	200 mA 500 ns	250 µA	30 A	175 ░C	-55 C	TO-263AA	1.61 V
IXYS DSEP29-06AS-TUB	35 ns	Surface Mount	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	200 mA 500 ns	250 µA		175 ░C	-55 C	TO-263AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 30A Through Hole TO-220AC

Technical documentation and resources