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71V3577S75BQG - 165 TBGA

71V3577S75BQG

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Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS FLOWTHROUGH SRAM WITH 3.3V I/O

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71V3577S75BQG - 165 TBGA

71V3577S75BQG

Active
Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS FLOWTHROUGH SRAM WITH 3.3V I/O

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71V3577S75BQG
Access Time7.5 ns
Clock Frequency117 MHz
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization128K x 36
Memory Size4.5 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case165-TBGA
Supplier Device Package165-CABGA (13x15)
TechnologySRAM - Synchronous, SDR
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 41$ 7.35
Tray 136$ 8.05

Description

General part information

71V3577 Series

The 71V3577 3.3V CMOS SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources