
ZXMP4A16GQTA
ActiveDiodes Inc
40V P-CHANNEL ENHANCEMENT MODE MOSFET
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ZXMP4A16GQTA
ActiveDiodes Inc
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMP4A16GQTA |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.6 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 26.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1007 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | SOT-223-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
ZXMP4A16GQ Series
40V P-Channel Enhancement Mode MOSFET
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Grade | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Supplier Device Package | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Qualification | Rds On (Max) @ Id, Vgs | Package / Case | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 4.6 A | 1007 pF | Automotive | 1 V | Surface Mount | -55 °C | 150 °C | 4.5 V 10 V | 2 W | SOT-223-3 | 20 V | 26.1 nC | P-Channel | AEC-Q101 | 60 mOhm | TO-261-4 TO-261AA | 40 V | ||
Diodes Inc | MOSFET (Metal Oxide) | 6.4 A | 1007 pF | 1 V | Surface Mount | -55 °C | 150 °C | 4.5 V 10 V | 2 W | SOT-223-3 | 20 V | 26.1 nC | P-Channel | 60 mOhm | TO-261-4 TO-261AA | 40 V | ||||
Diodes Inc | Surface Mount | SOT-223-3 | TO-261-4 TO-261AA | |||||||||||||||||
Diodes Inc | MOSFET (Metal Oxide) | 6.6 A | 965 pF | 1 V | Surface Mount | -55 °C | 150 °C | 4.5 V 10 V | TO-252-3 | 20 V | P-Channel | 60 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 40 V | 29.6 nC | 2.15 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.31 | |
| 10 | $ 0.86 | |||
| 100 | $ 0.60 | |||
| 500 | $ 0.47 | |||
| Digi-Reel® | 1 | $ 1.31 | ||
| 10 | $ 0.86 | |||
| 100 | $ 0.60 | |||
| 500 | $ 0.47 | |||
| Tape & Reel (TR) | 1000 | $ 0.41 | ||
| 2000 | $ 0.36 | |||
| 3000 | $ 0.34 | |||
| 5000 | $ 0.33 | |||
| 7000 | $ 0.33 | |||
Description
General part information
ZXMP4A16GQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: DC-DC converters, disconnect switches, audio output stages, and motor controls.
Documents
Technical documentation and resources