E6D16065G

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Wolfspeed

DIODE SIC 650V 51A TO263

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Wolfspeed

DIODE SIC 650V 51A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	E6D16065G

Capacitance @ Vr, F	1017 pF
Current - Average Rectified (Io)	51 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Capacitance @ Vr, F	Qualification	Package / Case	Speed	Mounting Type	Technology	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Wolfspeed E6D16065A	1026 pF	AEC-Q101	TO-220-2	No Recovery Time	Through Hole	SiC (Silicon Carbide) Schottky	1.5 V	175 ░C	-55 C	Automotive	TO-220-2	54 A	650 V	50 µA
Wolfspeed E6D16065D1	1017 pF		TO-247-3	No Recovery Time	Through Hole	SiC (Silicon Carbide) Schottky	1.5 V	175 ░C	-55 C		TO-247-3	51 A	650 V	50 µA
Wolfspeed E6D16065G	1017 pF		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	No Recovery Time	Surface Mount	SiC (Silicon Carbide) Schottky	1.5 V	175 ░C	-55 C		TO-263-2	51 A	650 V	50 µA
Wolfspeed E6D16065H	1017 pF	AEC-Q101	TO-247-2	No Recovery Time	Through Hole	SiC (Silicon Carbide) Schottky	1.5 V	175 ░C	-55 C	Automotive	TO-247-2	51 A	650 V	50 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 51A Surface Mount TO-263-2

Technical documentation and resources