VNH9013Y

Obsolete

STMicroelectronics

IC HALF BRIDGE DRVR 40A 36PWRSSO

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VNH9013Y

Obsolete

STMicroelectronics

IC HALF BRIDGE DRVR 40A 36PWRSSO

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	VNH9013Y

Applications	DC Motors, General Purpose
Current - Output / Channel [custom]	40 A
Grade	Automotive
Load Type	Resistive, Inductive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Output Configuration	Half Bridge (2)
Package / Case	0.295 in
Package / Case	36-PowerBFSOP
Package / Case [x]	7.5 mm
Qualification	AEC-Q100
Rds On (Typ) [custom]	6 mOhm
Rds On (Typ) [custom]	7.8 mOhm
Supplier Device Package	PowerSSO-36 TP
Technology	MOSFET (Metal Oxide)
Voltage - Load	80 V
Voltage - Supply	80 V

VNH9013Y Series

Automotive integrated H-bridge

Part	Load Type	Voltage - Supply	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Output Configuration	Supplier Device Package	Current - Output / Channel [custom]	Qualification	Voltage - Load	Applications	Technology	Package / Case	Package / Case [x]	Package / Case	Rds On (Typ) [custom]	Rds On (Typ) [custom]	Operating Temperature
STMicroelectronics VNH9013Y	Inductive Resistive	80 V	Automotive	-40 C	175 °C	Surface Mount	Half Bridge (2)	PowerSSO-36 TP	40 A	AEC-Q100	80 V	DC Motors General Purpose	MOSFET (Metal Oxide)	0.295 in	7.5 mm	36-PowerBFSOP	6 mOhm	7.8 mOhm
STMicroelectronics VNH9013YTR	Inductive Resistive	80 V	Automotive			Surface Mount	Half Bridge (2)	PowerSSO-36 TP	40 A	AEC-Q100	80 V	DC Motors General Purpose	MOSFET (Metal Oxide)	0.295 in	7.5 mm	36-PowerBFSOP	6 mOhm	7.8 mOhm	175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

VNH9013Y Series

The device is an automotive integrated H-bridge intended for a wide range of automotive applications driving DC motors. The device incorporates a dual channel and two single channel MOSFETs. The device is designed using STMicroelectronics®well known and proven proprietary VIPower®M0-S9 technology that allows to integrate in a package four different channels in H-bridge topology.

This package, specifically designed for the harsh automotive environment offers improved thermal performance thanks to exposed die pads. Moreover, its fully symmetrical mechanical design allows superior manufacturability at board level.

Documents

Technical documentation and resources

No documents available