DSEI25-06A

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IXYS

DIODE GEN PURP 600V 25A TO220-2

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IXYS

DIODE GEN PURP 600V 25A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI25-06A

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.31 V

Part	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
IXYS DSEI25-06A	Through Hole	200 mA 500 ns	100 µA	TO-220-2	25 A	TO-220-2	150 °C	-40 °C	Standard	50 ns	20 pF	600 V	1.31 V

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General part information

Diode 600 V 25A Through Hole TO-220-2

Technical documentation and resources

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