DHG100X1200NA

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IXYS

DIODE MOD GP 1.2KV 50A SOT227B

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IXYS

DIODE MOD GP 1.2KV 50A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	DHG100X1200NA

Current - Average Rectified (Io) (per Diode)	50 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOT-227B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.16 V

Part	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Diode Configuration	Package / Case	Mounting Type	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If
IXYS DHG100X600NA	100 A	600 V	Standard Recovery >500ns	200 mA	2 Independent	SOT-227-4 miniBLOC	Chassis Mount	Standard	SOT-227B
IXYS DHG100X1200NA	50 A	1.2 kV		200 mA 500 ns	2 Independent	SOT-227-4 miniBLOC	Chassis Mount	Standard	SOT-227B	100 µA	150 °C	-40 °C	75 ns	2.16 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	100	$ 23.72

General part information

Diode Array 2 Independent 1200 V 50A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources