US1MH

Active

Taiwan Semiconductor Corporation

75NS, 1A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

75NS, 1A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	US1MH

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Qualification	AEC-Q101
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Technology	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Qualification
Taiwan Semiconductor Corporation US1M R3G	1000 V	DO-214AC (SMA)	75 ns	5 µA	Surface Mount	1.7 V	200 mA 500 ns	Standard	10 pF	DO-214AC SMA	1 A	150 °C	-55 °C
Taiwan Semiconductor Corporation US1MH	1000 V	DO-214AC (SMA)	75 ns	5 µA	Surface Mount	1.7 V	200 mA 500 ns	Standard	10 pF	DO-214AC SMA	1 A	150 °C	-55 °C	Automotive	AEC-Q101
Taiwan Semiconductor Corporation US1MHR3G	1000 V	DO-214AC (SMA)	75 ns	5 µA	Surface Mount	1.7 V	200 mA 500 ns	Standard	10 pF	DO-214AC SMA	1 A	150 °C	-55 °C	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources