AOI4S60

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO251A

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI4S60

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	263 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	56.8 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.1 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOI4T60	Through Hole	4 A	30 V	83 W	MOSFET (Metal Oxide)	10 V	2.1 Ohm	5 V	460 pF	N-Channel	TO-251-3 Stub Leads IPAK	600 V	150 °C	-50 °C	TO-251A
Alpha & Omega Semiconductor Inc. AOI4S60	Through Hole	4 A	30 V	56.8 W	MOSFET (Metal Oxide)	10 V		4.1 V		N-Channel	TO-251-3 Stub Leads IPAK	600 V	150 °C	-55 °C	TO-251A	900 mOhm	6 nC	263 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$