VS-243NQ100PBF

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 240A D-67

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 240A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	VS-243NQ100PBF

Capacitance @ Vr, F	5500 pF
Current - Average Rectified (Io)	240 A
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D-67 HALF-PAK
Speed	200 mA, 500 ns
Supplier Device Package	D-67 HALF-PAK
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division VS-243NQ100PBF	D-67 HALF-PAK	100 V	5500 pF	175 ░C	-55 C	240 A	D-67 HALF-PAK	200 mA 500 ns	950 mV	Schottky	Chassis Mount
Vishay General Semiconductor - Diodes Division 243NQ100	D-67 HALF-PAK	100 V	5500 pF			240 A	D-67 HALF-PAK	200 mA 500 ns		Schottky	Chassis Mount	860 mV

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General part information

Diode 100 V 240A Chassis Mount D-67 HALF-PAK

Technical documentation and resources