SI4953DY

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ON Semiconductor

MOSFET 2P-CH 30V 4.9A 8SOIC

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ON Semiconductor

MOSFET 2P-CH 30V 4.9A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4953DY

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Technology
ON Semiconductor SI4953DY	750 pF	25 nC	4.9 A	2 P-Channel	8-SOIC	1 V	Surface Mount	-55 °C	150 °C	30 V	53 mOhm	900 mW	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	437	$ 0.69

General part information

Mosfet Array 30V 4.9A (Ta) 900mW (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available