CP398X-CPDM303NH-WN

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Central Semiconductor Corp

MOSFET N-CH 30V 3.6A DIE

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Central Semiconductor Corp

MOSFET N-CH 30V 3.6A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	CP398X-CPDM303NH-WN

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	590 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Rds On (Max) @ Id, Vgs [Max]	78 mOhm
Supplier Device Package	Die
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package
Central Semiconductor Corp CP398X-CPDM303NH-WN	590 pF	1.2 V	Die	MOSFET (Metal Oxide)	2.5 V 4.5 V	13 nC	30 V	Surface Mount	N-Channel	-55 °C	150 °C	12 V	3.6 A	78 mOhm	Die
Central Semiconductor Corp CP398X-CPDM303NH-CT	590 pF	1.2 V	Die	MOSFET (Metal Oxide)	2.5 V 4.5 V	13 nC	30 V	Surface Mount	N-Channel	-55 °C	150 °C	12 V	3.6 A	78 mOhm	Die

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 3.6A (Ta) Surface Mount Die

Technical documentation and resources