TK18E10K3,S1X(S

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 18A TO220-3

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 18A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	TK18E10K3,S1X(S

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature	FET Type	Mounting Type	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK18E10K3,S1X(S	18 A	42 mOhm	TO-220-3	150 °C	N-Channel	Through Hole	TO-220-3	MOSFET (Metal Oxide)	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 18A (Ta) Through Hole TO-220-3

Technical documentation and resources