2N6036

Obsolete

ON Semiconductor

4.0 A, 80 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

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Obsolete

ON Semiconductor

4.0 A, 80 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N6036

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	TO-126
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

4.0 A, 80 V PNP Darlington Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type
ON Semiconductor 2N6036G	100 µA	TO-126-3 TO-225AA	150 °C	-65 °C	PNP - Darlington	4 A	TO-126	3 V	80 V	40 W	750	Through Hole
ON Semiconductor 2N6036	100 µA	TO-126-3 TO-225AA	150 °C	-65 °C	PNP - Darlington	4 A	TO-126	3 V	80 V	40 W	750	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.