Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5191G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 hFE |
| Frequency - Transition | 2 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 40 W |
| Supplier Device Package | TO-126 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 1.41 | |
| 10 | $ 0.89 | |||
| 100 | $ 0.59 | |||
| 500 | $ 0.46 | |||
| 1000 | $ 0.42 | |||
| 2000 | $ 0.38 | |||
| 5000 | $ 0.35 | |||
| 10000 | $ 0.32 | |||
| ON Semiconductor | N/A | 1 | $ 0.34 | |
Description
General part information
2N5191 Series
The Power 4 A, 80 V Bipolar NPN Transistors is for use in power amplifier and switching circuits. This transistor has excellent safe area limits and is a complement to PNP 2N5194, 2N5195
Documents
Technical documentation and resources