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VS-1EFU06-M3/I - DO-219AB SFM

VS-1EFU06-M3/I

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 1A DO219AB

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DocumentsDatasheet
VS-1EFU06-M3/I - DO-219AB SFM

VS-1EFU06-M3/I

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 1A DO219AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-1EFU06-M3/I
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr3 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseDO-219AB
Reverse Recovery Time (trr)32 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-219AB (SMF)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.43
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
2000$ 0.10
5000$ 0.09
Digi-Reel® 1$ 0.43
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
2000$ 0.10
5000$ 0.09
Tape & Reel (TR) 10000$ 0.08
30000$ 0.08
50000$ 0.07
100000$ 0.07

Description

General part information

1EFU06 Series

Diode 600 V 1A Surface Mount DO-219AB (SMF)

Documents

Technical documentation and resources