HERAF808G

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Taiwan Semiconductor Corporation

80NS, 8A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

80NS, 8A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HERAF808G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case
Taiwan Semiconductor Corporation HERAF808G	1000 V	60 pF	80 ns	8 A	1.7 V	200 mA 500 ns	ITO-220AC	150 °C	-55 °C	Standard	10 çA	Through Hole	TO-220-2 Full Pack

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General part information

Diode 1000 V 8A Through Hole ITO-220AC

Technical documentation and resources