2N4117A-E3

Obsolete

Vishay General Semiconductor - Diodes Division

JFET N-CH 40V TO206AF

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Obsolete

Vishay General Semiconductor - Diodes Division

JFET N-CH 40V TO206AF

Technical Specifications

Parameters and characteristics for this part

Specification	2N4117A-E3

Current - Drain (Idss) @ Vds (Vgs=0)	30 µA
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-206AF
Supplier Device Package	TO-72
Voltage - Breakdown (V(BR)GSS)	40 V
Voltage - Cutoff (VGS off) @ Id	600 mV

Part	Supplier Device Package	Supplier Device Package	Package / Case	Mounting Type	Current - Drain (Idss) @ Vds (Vgs=0)	FET Type	Voltage - Breakdown (V(BR)GSS)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Voltage - Cutoff (VGS off) @ Id
Vishay General Semiconductor - Diodes Division 2N4117A-2	TO-206AF	TO-72	TO-206AF TO-72-4 Metal Can	Through Hole	30 µA	N-Channel	40 V	-55 °C	175 ░C	3 pF	600 mV
Vishay General Semiconductor - Diodes Division 2N4117A-E3	TO-206AF	TO-72	TO-206AF TO-72-4 Metal Can	Through Hole	30 µA	N-Channel	40 V	-55 °C	175 ░C	3 pF	600 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

JFET N-Channel 40 V 300 mW Through Hole TO-206AF (TO-72)

Technical documentation and resources