GB05MPS33-263

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GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 14A TO263-7

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GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 14A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	GB05MPS33-263

Capacitance @ Vr, F	288 pF
Current - Average Rectified (Io)	14 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	3300 V
Voltage - Forward (Vf) (Max) @ If	3 V

Part	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
GeneSiC Semiconductor GB05MPS33-263	No Recovery Time	Surface Mount	3 V	175 ░C	-55 C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	0 ns	288 pF	SiC (Silicon Carbide) Schottky	10 µA	14 A	TO-263-7	3300 V

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General part information

Diode 3300 V 14A Surface Mount TO-263-7

Technical documentation and resources