GBPC3502T

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GeneSiC Semiconductor

35A 200V GBPC-T BRIDGE RECTIFIERS ROHS

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GeneSiC Semiconductor

35A 200V GBPC-T BRIDGE RECTIFIERS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC3502T

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	QC Terminal
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, GBPC-T
Supplier Device Package	GBPC-T
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Current - Reverse Leakage @ Vr	Diode Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max) [Max]
GeneSiC Semiconductor GBPC3502W	5 µA	Single Phase	4-Square GBPC-W	-55 °C	150 °C	Standard	GBPC-W	1.1 V	Through Hole	35 A	200 V
GeneSiC Semiconductor GBPC3502T	5 µA	Single Phase	4-Square GBPC-T	-55 °C	150 °C	Standard	GBPC-T	1.1 V	QC Terminal	35 A	200 V

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General part information

Bridge Rectifier Single Phase Standard 200 V QC Terminal GBPC-T

Technical documentation and resources