VS-249NQ150PBF

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 240A D-67

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 240A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	VS-249NQ150PBF

Capacitance @ Vr, F	6000 pF
Current - Average Rectified (Io)	240 A
Current - Reverse Leakage @ Vr	6 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D-67 HALF-PAK
Speed	200 mA, 500 ns
Supplier Device Package	D-67 HALF-PAK
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If [Max]	1.21 V

Part	Capacitance @ Vr, F	Speed	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-249NQ150PBF	6000 pF	200 mA 500 ns	6 mA	D-67 HALF-PAK	D-67 HALF-PAK	1.21 V	Schottky	Chassis Mount	240 A	175 ░C	-55 C

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General part information

Diode 150 V 240A Chassis Mount D-67 HALF-PAK

Technical documentation and resources