SCS302AJTLL

NRND

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 2.15 A, 6 NC, TO-263AB

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NRND

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 2.15 A, 6 NC, TO-263AB

Technical Specifications

Parameters and characteristics for this part

Specification	SCS302AJTLL

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	2.15 A
Current - Reverse Leakage @ Vr	10.8 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Mounting Type	Reverse Recovery Time (trr)	Speed	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor SCS302AJTLL	Surface Mount	0 ns	No Recovery Time	175 °C	2.15 A	10.8 µA	SiC (Silicon Carbide) Schottky	1.5 V	110 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V

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General part information

Diode 650 V 2.15A Surface Mount LPTL

Technical documentation and resources