MBR60100R

Active

GeneSiC Semiconductor

100V 840MV@60A 60A DO-5 SCHOTTKY DIODES ROHS

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

100V 840MV@60A 60A DO-5 SCHOTTKY DIODES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	MBR60100R

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

Part	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology
GeneSiC Semiconductor MBR60100R	DO-203AB DO-5 Stud	Chassis Stud Mount	5 mA	60 A	150 °C	-65 C	200 mA 500 ns	100 V	DO-5	Reverse Polarity Schottky
GeneSiC Semiconductor MBR60100	DO-203AB DO-5 Stud	Chassis Stud Mount	5 mA	60 A	150 °C	-65 C	200 mA 500 ns	100 V	DO-5	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 60A Chassis, Stud Mount DO-5

Technical documentation and resources