UG2004PT

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Taiwan Semiconductor Corporation

25NS, 20A, 200V, ULTRA FAST RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

25NS, 20A, 200V, ULTRA FAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	UG2004PT

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	930 mV

Part	Current - Reverse Leakage @ Vr	Qualification	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Diode Configuration	Grade	Current - Average Rectified (Io) (per Diode)	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Taiwan Semiconductor Corporation UG2004PTHC0G	200 µA	AEC-Q101	Standard	175 ░C	-55 C	TO-247AD (TO-3P)	930 mV	TO-247-3	25 ns	1 Pair Common Cathode	Automotive	20 A	200 mA 500 ns	Through Hole	200 V
Taiwan Semiconductor Corporation UG2004PT	200 µA		Standard	175 ░C	-55 C	TO-247AD (TO-3P)	930 mV	TO-247-3	25 ns	1 Pair Common Cathode		20 A	200 mA 500 ns	Through Hole	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 200 V 20A Through Hole TO-247-3

Technical documentation and resources